Process of making platinum silicide fuse links for integrated ci

Metal working – Method of mechanical manufacture – Electrical device making

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29578, 357 51, H01H 6902

Patent

active

041352955

ABSTRACT:
Selected circuit elements and interconnections of an integrated circuit device are connected by platinum silicide fuse links which open when electrical power exceeds a threshold amount. The fuse is constructed by defining the fuse geometry in a polycrystalline silicon layer over a wafer substrate, depositing a layer of platinum thereover and then sintering the platinum into the polysilicon.

REFERENCES:
patent: 3287612 (1966-11-01), Lepselter
patent: 3335338 (1967-08-01), Lepselter
patent: 3590471 (1971-07-01), Lepselter
patent: 3783506 (1974-01-01), Pelfield
patent: 3792319 (1974-02-01), Tsang

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