Process of making high T.sub.c Josephson junction device

Details Process of making high T.sub.c Josephson junction device Process of making high T.sub.c Josephson junction device

1994-02-01

1999-03-09

King, Roy V.

Superconductor technology: apparatus, material, process

Processes of producing or treating high temperature...

Producing josephson junction, per se

505190, 505702, 427 62, 427 63, 216101, H01L 3924

Patent

active

058800697

ABSTRACT:
A desired pattern is formed on a non-superconducting oxide film after the non-superconducting oxide film has been formed on a magnesia substrate. A superconducting oxide film is formed over the exposed parts of the substrate and the non-superconducting oxide film. The epitaxial orientation of the superconducting oxide film section on the non-superconducting oxide film is different from that of the superconducting oxide film section on the substrate. A tilt-boundary junction is produced at a boundary between the superconducting film sections which are different in epitaxial orientation from each other. Thus, a Josephson junction having a desired pattern can be obtained.

REFERENCES:
patent: 5157466 (1992-10-01), Char et al.
Vasquez et al, "Nonaqueous chemical depth profiling of YBa.sub.2 Cu.sub.3 O.sub.7-x " Appl. Phys. lett. 54(11) Mar. 1989 pp. 1060-1062.
Mizuno et al, "Fabrication of thin-film-type Josephson junctions using a Bi-Sr-Ca-Cu-O/Bi-Sr-Cu-O/Bi-Sr-Ca-Cu-O structure" Appl. Phys. lett. 56 (15) Apr., 1990 pp. 1469-1471.
Chew et al, "Orientation control of YBa.sub.2 Cu.sub.3 O.sub.7 thin films on MgO for epitaxial junctions", Appl. Phys. lett. 60(12) Mar. 1992 pp. 1516-1518.
Tsukamoto et al, "Low temperature annealing effect on Bi-Sr-Ca-Cu-O thin films prepared by layer-by-layer deposition", Jpn. J. Appl. Phys. 30(5A) May 1991 pp. L830-L833.
Tsukada et al, "In-situ growth of Bi-Sr-Ca-Cu-O films by shutter -controlled molecular beam epitaxy", Supercond. Sci. Technol. 4(1991) pp. 118-120.
Eckstein et al, "Atomically layered heteroepitaxially growth of single-crystal films of superconducting Bi.sub.2 Sr.sub.2 Ca.sub.2 Cu.sub.3 O.sub.x ", Appl. Phys. lett. 57(9) Aug. 1990, pp. 931-933.
Char, K., et al.,Appl. Phys. Lett. 59, Aug. 1991,"Bi-epitaxial grain boundary junction in YBawCu307",May 13, 1991, pp. 733-735.
Tetsuya Takami, et al., Jpn.J.Appl.Phys. vol.31 (1992) pp. L246-L248, "Artificial Grain Boundary Junction is BiSrCaCuO Thin Films with (11n) and (001) Orientation".

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