Process of making high purity aluminum nitride

Details Process of making high purity aluminum nitride Process of making high purity aluminum nitride

1986-04-25

1988-11-08

Doll, John

Compositions: ceramic

Ceramic compositions

Refractory

423412, C04B 3558

Patent

active

047834307

ABSTRACT:
A high purity aluminum nitride is made by precipitating (CH.sub.3).sub.3 Al:NH.sub.3, washing it with hexane and pyrolyzing it to AlN. The precipitation is obtained by reacting a hexane solution of trimethyl aluminum with high purity anhydrous NH.sub.3(g), or by reaction Al(CH.sub.3).sub.3(g) and NH.sub.3(g) in a hexane solution, or by reacting Al(CH.sub.3).sub.3(g ) with NH.sub.3(1). The resulitng AlN is very pure and a density of 91.3% of theoretical has been achieved by pressing and sintering a pellet made from it as compared to a 89% theoretical density obtained by pressing and sintering a pellet made from commercial AlN powder.

REFERENCES:
patent: 3551101 (1970-12-01), Matsuo et al.
patent: 3572992 (1971-03-01), Komeya et al.
patent: 4435513 (1984-03-01), Komeya
patent: 4478785 (1984-10-01), Huseby et al.
Skoog et al., Fundamentals of Analytical Chemistry, (1963), Holt, Rinehart and Winston, pp. 180-182.
Interrante, "Studies of Organometallic Precursors to Aluminum Nitride", Abstract of Materials Research Society Meeting, Apr. 1986 at Palo Alto, Calif.

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