Process of making GaAs electrical circuit devices with Langmuir-

Details Process of making GaAs electrical circuit devices with Langmuir- Process of making GaAs electrical circuit devices with Langmuir-

1990-11-27

1992-01-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 40, 437225, 437235, 437228, H01L 21265

Patent

active

050791796

ABSTRACT:
A GaAs circuit structure is described which interposes a Langmuir-Blodgett (L-B) layer between the substrate and a conductive contact. The thickness of the layer is controlled to determine the operating characteristics of the device. The head group of the L-B molecule is chosen so that it passivates the surface states of the particular GaAs substrate being used. Certain preferred acids and amino head groups are disclosed. The L-B layer has been found to both increase the gate barrier height for an FET, and to passivate dangling bonds and surfaces defects in the GaAs substrate to enable inversion mode operation. Specific FET and diode devices are described.

REFERENCES:
patent: 4641161 (1987-02-01), Kim et al.
Tredgold et al., "GaAs Schottky Diodes Incorporating Langmuir-Blodgett Layers of Pre-Formed Polymers", Dec. 1985, Journal of Physics, D: Applied Physics, vol. 18, No. 12, pp. 2483-2487.
Roberts, "INP/Langmuir Film MISFET"; Solid State and Electron Devices; vol. 2, No. 6 (1987); pp. 169-175.
Offsey; "Unpinned (100) GaAs Surfaces in Air using Photochemistry", Appl. Phys. Lett. 48(7); 1986; pp. 475-477.
Lloyd; "Amorphous Silicon/Langmuir-Blodgett Film Field Effect Transistor"; Thin Solid Films, 99 (1983); 297-304.
Kuhn; "Functionalized Monolayer Assembly Manipulation"; Thin Solid Films, 99 (1983); pp. 1-16.
Tredgold; "Increase of Schottky Barrier Height at GaAs Surfaces by Carboxylic Acid Monolayers and Multilayers"; Phys. D: Appl. Phys. 18 (1985) 103-109.
"Ga/As LB Film Miss Switching Device"; Thomas; Electron. Letters; vol. 20, No. 20 (1984); pp. 838-839.
Fung; "Planar Silicon Field Effect Transistors with Langmuir-Blodgett Gate Insulators"; Thin Solid Films, 132 (1985); 33-39.

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