Process of making and using micro mask

Fishing – trapping – and vermin destroying

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437233, 437235, 437238, 437977, 437919, 437 52, H01L 21308

Patent

active

052545032

ABSTRACT:
A method is provided to enable the formation of sub-lithographic relief images to increase the surface area of semiconductor structures for use in the storage nodes of DRAM cells. The method includes the steps of forming in situ a non-planar region having a relief pattern comprising sub-micron sized elements and the transferring the relief pattern into a masking layer in order to selectively etch a substrate to form relatively deep trenches having a density equal to the relief pattern. Polysilicon and porous silicon can be used to form the sub-micron relief pattern.

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