Process of making an optoelectronic devices utilizing multiple q

Details Process of making an optoelectronic devices utilizing multiple q Process of making an optoelectronic devices utilizing multiple q

1996-06-18

1999-02-16

Bowers, Jr., Charles L.

Fishing, trapping, and vermin destroying

437105, 117 85, 257257, 257458, H01L 2120

Patent

active

058720162

ABSTRACT:
Optoelectronic devices such as photodetectors, modulators and lasers with improved optical properties are provided with an atomically smooth transition between the buried conductive layer and quantum-well-diode-containing intrinsic region of a p-i-n structure. The buried conductive layer is grown on an underlying substrate utilizing a surfactant-assisted growth technique. The dopant and dopant concentration are selected, as a function of the thickness of the conductive layer to be formed, so that a surface impurity concentration of from 0.1 to 1 monolayer of dopant atoms is provided. The presence of the impurities promotes atomic ordering at the interface between the conductive layer and the intrinsic region, and subsequently results in sharp barriers between the alternating layers comprising the quantum-well-diodes of the intrinsic layer.

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