Process of making a semiconductor epitaxial substrate

Details Process of making a semiconductor epitaxial substrate Process of making a semiconductor epitaxial substrate

1994-06-28

1995-08-15

Breneman, R. Bruce

Fishing, trapping, and vermin destroying

437107, 437126, 148 334, 148 335, 148 336, H01L 2120

Patent

active

054419131

ABSTRACT:
A semiconductor epitaxial substrate and a process for producing the same, the semiconductor epitaxial substrate comprising a GaAs single-crystal substrate having thereon an In.sub.y Ga.sub.(1-y) As (0<y.ltoreq.1) crystal layer as a channel layer, the composition and the thickness of the In.sub.y Ga.sub.(1-y) As layer being in the ranges within the elastic deformation limit of crystals constituting the In.sub.y Ga.sub.(1-y) As layer and the vicinity of the In.sub.y Ga.sub.(1-y) As layer, the semiconductor epitaxial substrate further comprising a semiconductor layer between the channel layer and an electron donating layer for supplying electrons to the channel layer, the semiconductor layer having a thickness of from 0.5 to 5 nm and a bandgap width within the range of from the bandgap width of GaAs to the bandgap width of the electron donating layer.

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Patent Abstracts of Japan, vol. 16, No. 158, Apr. 17, 1992, p. 116 E 1191; & JP-A-04 10 684.
Patent Abstracts of Japan, vol. 14, No. 568, Dec. 18, 1990, p. 43 E 1014; & JP-A-02 246 344 (Sonyo).
Patent Abstracts of Japan, vol. 17, No. 156, Mar. 26, 1993, p. 117 E 1341; & JP-A-04 321 239 (Sonyo).

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