Process of making a polysilicon barrier layer in a self-aligned

Details Process of making a polysilicon barrier layer in a self-aligned Process of making a polysilicon barrier layer in a self-aligned

1994-12-27

1996-01-02

Fourson, George

Fishing, trapping, and vermin destroying

437 52, 437190, 437193, H01L 21265, H01L 2170, H01L 2700, H01L 2144

Patent

active

054808146

ABSTRACT:
A method for forming a metal contact in a self aligned contact region over a impurity region in a substrate which comprises forming a doped polysilicon layer over the device surface except in a contact area. A thin polysilicon barrier layer and a metal layer, preferably tungsten, are then formed over the polysilicon layer and the contact area. The resulting metal contact has superior step coverage, lower resistivity, and maintains the shallow junction depth of buried impurity regions.

REFERENCES:
patent: 4800177 (1989-01-01), Nakamae
patent: 4904620 (1990-02-01), Schmitz
patent: 4985371 (1991-01-01), Rana et al.
patent: 5174858 (1992-12-01), Yamamoto et al.
patent: 5275972 (1994-01-01), Ogawa et al.

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