Process of making a MOS-technology power device

Details Process of making a MOS-technology power device Process of making a MOS-technology power device

1995-12-19

1998-10-06

Niebling, John

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having field effect structure

438268, 148DIG126, H01L 21332, H01L 21336

Patent

active

058175466

ABSTRACT:
A process forms a MOS-technology power device including a semiconductor material layer of a first conductivity type and a body region disposed therein. The body region includes a heavily doped region of a second conductivity type, a lightly doped region of the second conductivity type and a heavily doped region of the first conductivity type. The process includes forming an insulated gate layer on portions of the surface of the semiconductor material layer to leave selected portions of the semiconductor material layer exposed. A dopant of the second conductivity type is implanted twice at different concentrations and energies into the selected regions of the semiconductor material layer. The implanted ions are thermally diffused to form body regions, each body region including a heavily doped region substantially aligned with the edges of the insulated gate layer, and a lightly doped region formed by lateral diffusion of the first dopant under the insulated gate layer. A dopant of the first conductivity type is then implanted into the heavily doped regions to form source regions substantially aligned with the edges of the insulated gate layer.

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