Process of maintaining hybrid etch

Details Process of maintaining hybrid etch Process of maintaining hybrid etch

2006-11-21

2006-11-21

Norton, Nadine (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S754000, C252S079100, C252S079200, C252S079300, C252S079400

Reexamination Certificate

active

07138342

ABSTRACT:
Process for combined chemical cleaning and etching of parts made of aluminum and/or aluminum alloys including: (a) providing a cleaning and etching solution including 5–30 grams/liter of phosphoric acid; 5–30 grams/liter of hydrogen fluoride; 120–220 grams/liter of sulfamic acid; 55–85.0 grams/liter of glycol ether; and balance water; (b) contacting the parts with the solution for a time sufficient to achieve the desired amount of cleaning and etching; (c) periodically measuring the etching rate of the solution; (d) when the etching rate is below the required minimum rate, adding sufficient hydrogen fluoride to restore the etching rate above the required minimum rate; and (e) periodically adding sufficient sulfamic acid to prevent the formation of scale made of hydrated aluminum fluoride.

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