Process of introduction and diffusion of platinum ions in a slic

Details Process of introduction and diffusion of platinum ions in a slic Process of introduction and diffusion of platinum ions in a slic

1991-11-19

1993-07-13

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 11, 437142, 257 49, H01L 21265

Patent

active

052273156

ABSTRACT:
A process is provided for introduction and diffusion of platinum ions in a slice of silicon material. The slice of silicon is subjected to a succession of thermal steps at high temperature for the formation of at least one semiconductor device. Later processing steps include the opening of contacts and surface metallization. Platinum ions are introduced by ionic implant prior to the metallization step.

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