Process of growing single crystals of gallium phosphide

Details Process of growing single crystals of gallium phosphide Process of growing single crystals of gallium phosphide

1973-08-28

1976-03-30

Vertiz, Oscar R.

Chemistry of inorganic compounds

Phosphorus or compound thereof

423305, 156616, 156620, C01B 2500

Patent

active

039475484

ABSTRACT:
A single crystal of gallium phosphide including 0.5 atomic ratio or less of indium is grown from a melt consisting of indium, gallium and phosphorous with an atomic ratio of gallium to phosphorous equal to at least 2.0.

REFERENCES:
patent: 3206406 (1965-09-01), Barkemeyer et al.
patent: 3278342 (1966-10-01), John et al.
patent: 3565702 (1971-02-01), Nelson
patent: 3615203 (1971-10-01), Kaneko et al.

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