Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1983-04-01
1985-12-31
Andrews, Melvyn J.
Metal working
Method of mechanical manufacture
Assembling or joining
29575, 29576T, 136243, 148 15, 148174, 148DIG60, 148DIG61, 426 86, H01L 2120, H01L 21322
Patent
active
045611718
ABSTRACT:
The invention relates to a process for gettering semiconductor devices. A getter layer of amorphous or microcrystalline silicon is applied to the device. The so coated device is thermally treated and the getter layer is removed.
REFERENCES:
patent: 3632438 (1972-01-01), Carlson et al.
patent: 3701696 (1972-10-01), Mets
patent: 3919765 (1975-11-01), Schloetterer
patent: 3929529 (1975-12-01), Poponiak
patent: 4001864 (1977-01-01), Gibbons
patent: 4053335 (1977-10-01), Hu
patent: 4134125 (1979-01-01), Adams et al.
patent: 4339470 (1982-07-01), Carlson
patent: 4396437 (1983-08-01), Kwok
IBM Technical Disclosure Bulletin, vol. 20, No. 9, Feb. 1978, by Poponiak et al.
IEEE Transactions on Electron Devices, "Impurity Gettering of Polycrystalline Solar Cells Fabricated from Refined Metallurgical-Grade Silicon," vol. ED-27, No. 4, Apr. 1980, by Saitoh et al.
Chen et al., "Post Epitaxial Polysilicon and Sl.sub.3 N.sub.4 Gettering in Silicon", J. Electrochem. Soc.: Solid State Science and Technology, vol. 129, No. 6, pp. 1294 to 1299, Jun. 1982.
Pearce et al., "Considerations Regarding Gettering in Integrated Circuits", Semiconductor Silicon, 1981, The Electrochemical Society, pp. 705 to 723.
Andrews Melvyn J.
Shell Austria Aktiengesellschaft
LandOfFree
Process of gettering semiconductor devices does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process of gettering semiconductor devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process of gettering semiconductor devices will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1017214