Process of forming electrodes and interconnections on silicon se

Details Process of forming electrodes and interconnections on silicon se Process of forming electrodes and interconnections on silicon se

1984-10-02

1985-11-12

Ozaki, George T.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29578, 29591, 148 15, 148187, 148188, H01L 21265, H01L 2128

Patent

active

045519080

ABSTRACT:
A process of forming electrodes and interconnections in a silicon semiconductor device comprises the steps of forming an insulating film on a silicon substrate, defining an opening in the insulating film, depositing a layer of metal having a high melting point on the insulating film, implanting ions to mix an interface between the metal layer and the silicon substrate, heating the construction in a temperature in the range of from 400 to 650 degrees Celsius to form a silicide of the metal layer in the opening, and selectively etching away an unreacted metal layer so as to self-align the silicide metal layer with the opening. The silicide metal layer is then annealed in a non-reducing gas atmosphere at a temperature ranging from 800 to 1,100 degrees Celsius.

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Nagasawa et al., Jpn. J. of Applied Physics, vol. 22, No. 1, Jan. 1983, pp. L57-L59.
Higuchi et al., Jpn. J. of Applied Physics, vol. 22, Suppl. 22-1, 1982, pp. 609 and 610.

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