Process of forming bipolar alignment mark for semiconductor

Details Process of forming bipolar alignment mark for semiconductor Process of forming bipolar alignment mark for semiconductor

1997-07-21

1999-03-16

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

148DIG102, H01L 2176

Patent

active

058829806

ABSTRACT:
There are disclosed a bipolar alignment mark structure for semiconductor device and a process for forming the same. The bipolar alignment mark structure comprises: a semiconductor substrate having a scribe region for defining a integrated circuit region; a plurality of negatively polar alignment marks having a form of trench which are aligned on the scribe region regularly distant from one another; and a plurality of positively polar alignment marks having a form of column which are aligned in such a way that they alternate with the negatively polar alignment marks. A step generated in the structure is more enlarged, which allows easy and accurate measurement of alignment mark. Based on this ease, the structure gives convenience to the fabrication process for a semiconductor device, along with high yield. In addition, the accuracy in measuring alignment mark can bring about an effect that the semiconductor device is improved in reliability.

REFERENCES:
patent: 5128283 (1992-07-01), Tamaka
Application Ser. No. 08/273,904, Eui Kyu Ryou, filing date Jul. 12, 1994.
Application Ser. No. 08/321,448, Bae, filing date Oct. 12, 1994.

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