Process of forming and controlling rough interfaces

Details Process of forming and controlling rough interfaces Process of forming and controlling rough interfaces

2007-07-13

2010-10-05

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S459000, C438S665000, C438S770000, C257SE21284

Reexamination Certificate

active

07807548

ABSTRACT:
The invention provides a method for forming a semiconductor component with a rough buried interface. The method includes providing a first semiconductor substrate having a first surface of roughness R1. The method further includes thermally oxidizing the first surface of the first semiconductor substrate to form an oxide layer defining an external oxide surface on the first semiconductor substrate and a buried oxide-semiconductor interface below the oxide surface, so that the buried oxide surface has a roughness R2that is less than R1. The method also includes assembling the oxide surface of the first semiconductor substrate with a second substrate. The invention also provides a component formed according to the method of the invention.

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