Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – On insulating substrate or layer
Reexamination Certificate
2006-11-03
2010-10-26
Nguyen, Khiem D (Department: 2823)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
On insulating substrate or layer
C438S404000, C257S347000, C257SE21540, C257SE21545
Reexamination Certificate
active
07820519
ABSTRACT:
A process of forming an electronic device can include providing a semiconductor-on-insulator substrate including a substrate, a first semiconductor layer, and a buried insulating layer lying between the first semiconductor layer and the substrate. The process can also include forming a field isolation region within the semiconductor layer, and forming an opening extending through the semiconductor layer and the buried insulating layer to expose the substrate. The process can further include forming a conductive structure within the opening, wherein the conductive structure abuts the substrate.
REFERENCES:
patent: 5489790 (1996-02-01), Lage
patent: 5557134 (1996-09-01), Sugisaka et al.
patent: 5565697 (1996-10-01), Asakawa et al.
patent: 5708287 (1998-01-01), Nakagawa et al.
patent: 5811315 (1998-09-01), Yindeepol et al.
patent: 5825067 (1998-10-01), Takeuchi et al.
patent: 5939755 (1999-08-01), Takeuchi et al.
patent: 5945712 (1999-08-01), Kim
patent: 6130458 (2000-10-01), Takagi et al.
patent: 6303413 (2001-10-01), Kalnitsky et al.
patent: 6429502 (2002-08-01), Librizzi et al.
patent: 6611024 (2003-08-01), Ang et al.
patent: 6617223 (2003-09-01), Wilson et al.
patent: 6649964 (2003-11-01), Kim
patent: 6670716 (2003-12-01), Christensen et al.
patent: 6734524 (2004-05-01), Parthasarathy et al.
patent: 6835629 (2004-12-01), Fallica
patent: 6890804 (2005-05-01), Shibib et al.
patent: 6930027 (2005-08-01), Parthasarathy et al.
patent: 7052939 (2006-05-01), Huang et al.
patent: 7265584 (2007-09-01), Yeh et al.
patent: 7282399 (2007-10-01), Takahashi
patent: 7561472 (2009-07-01), Doyle
patent: 2002/0081809 (2002-06-01), Pinto et al.
patent: 2004/0099878 (2004-05-01), Huang et al.
patent: 2004/0227185 (2004-11-01), Matsumoto et al.
patent: 2006/0051932 (2006-03-01), Yoneda
patent: 2006/0063349 (2006-03-01), Chang et al.
patent: 2006/0065924 (2006-03-01), Yilmaz
patent: 2008/0017906 (2008-01-01), Pelella et al.
patent: 2008057671 (2008-05-01), None
Kawai, F. et al., “Multi-Voltage SOI-BiCDMOS for 14V&42V Automotive Applications,” International Symposium on Power Semiconductor Devices & ICs, 2004, pp. 165-168.
Schwantes, S. et al., “Impact of the Back Gate Effect on Bipolar Junction Transistors in Smart Power SOI Technologies,” Proceedings of the 17th International Symposium on Power Semiconductor Devices & IC's, California, May 23-26, 2005, pp. 1-4.
Kawahashi, A., “A New-Generation Hybrid Electric Vehicle and Its Supporting Power Semiconductor Devices,” Proceedings of 2004 International Symposium on Power Semiconductor Devices & ICs, 2004, pp. 23-29.
Non-Final Office Action for U.S. Appl. No. 11/556,576 dated Jan. 4, 2008.
PCT Search Report from PCT/US2007/79690 dated Mar. 20, 2008.
Final Office Action for U.S. Appl. No. 11/556,576 dated Jun. 4, 2008.
Yang, E.S.; “Fundamentals of Semiconductor Devices,” McGraw-Hill Book Co.; 5-6 Ohmic Contact; pp. 136-138 (1978).
Non-Final Office Action for U.S. Appl. No. 11/556,576 dated Oct. 2, 2009.
Bose Amitava
Huang Xiaoqiu
Hui Paul
Khemka Vishnu K.
Roggenbauer Todd C.
Freescale Semiconductor Inc.
Nguyen Khiem D
LandOfFree
Process of forming an electronic device including a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process of forming an electronic device including a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process of forming an electronic device including a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4232495