Process of forming an electrically erasable programmable...

Details Process of forming an electrically erasable programmable... Process of forming an electrically erasable programmable...

2006-08-08

2006-08-08

Norton, Nadine G. (Department: 1765)

Etching a substrate: processes

Gas phase etching of substrate

C257S313000, C257S316000, C257S371000, C438S308000, C438S770000, C361S322000, C365S185320

Reexamination Certificate

active

07087182

ABSTRACT:
The present invention provides a flash memory integrated circuit and a method of fabricating the same. A tunnel dielectric in an erasable programmable read only memory (EPROM) device is nitrided with a hydrogen-bearing compound, particularly ammonia. Hydrogen is thus incorporated into the tunnel dielectric, along with nitrogen. The gate stack is etched and completed, including protective sidewall spacers and dielectric cap, and the stack lined with a barrier to hydroxyl and hydrogen species. Though the liner advantageously reduces impurity diffusion through to the tunnel dielectric and substrate interface, it also reduces hydrogen diffusion in any subsequent hydrogen anneal. Hydrogen is provided to the tunnel dielectric, however, in the prior exposure to ammonia.

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