Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation
Reexamination Certificate
2005-01-18
2005-01-18
Tsai, H. Jey (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Mesa formation
C438S042000, C438S044000, C438S053000
Reexamination Certificate
active
06844213
ABSTRACT:
A microneedle and a process of forming the microneedle of single-crystal silicon-based material without the need for deposited films. The microneedle comprises a piercing end, an oppositely-disposed second end, and an internal passage having an opening adjacent the piercing end. The cross-section of the microneedle, and therefore the passage within the microneedle, is defined by first and second walls formed of doped single-crystal silicon-based material and separated by the passage, and first and second sidewalls separated by the passage, sandwiched between the first and second walls, and formed of single-crystal silicon-based material that is more lightly doped than the first and second walls.
REFERENCES:
patent: 20020138049 (2002-09-01), Allen et al.
Hartman Domenica N. S.
Hartman Gary M.
Hartman & Hartman P.C.
Integrated Sensing Systems
Tsai H. Jey
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