Process of forming a microneedle and microneedle formed thereby

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation

Reexamination Certificate

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C438S042000, C438S044000, C438S053000

Reexamination Certificate

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06844213

ABSTRACT:
A microneedle and a process of forming the microneedle of single-crystal silicon-based material without the need for deposited films. The microneedle comprises a piercing end, an oppositely-disposed second end, and an internal passage having an opening adjacent the piercing end. The cross-section of the microneedle, and therefore the passage within the microneedle, is defined by first and second walls formed of doped single-crystal silicon-based material and separated by the passage, and first and second sidewalls separated by the passage, sandwiched between the first and second walls, and formed of single-crystal silicon-based material that is more lightly doped than the first and second walls.

REFERENCES:
patent: 20020138049 (2002-09-01), Allen et al.

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