Process of forming a film by low pressure chemical vapor deposit

Details Process of forming a film by low pressure chemical vapor deposit Process of forming a film by low pressure chemical vapor deposit

1989-03-15

1990-09-11

Morgenstern, Norman

Coating processes

Coating by vapor, gas, or smoke

118725, 427252, 427253, 427255, 4272552, 427299, C23C 1600

Patent

active

049562045

ABSTRACT:
A chemical vapor deposition method is characterized in that a heating block and a surface to be deposited of a substrate are arranged to face to each other at a given distance in a closed space, a source gas is guided into the closed space and supplied between the heating block and the substrate, thereby depositing a thin film on the surface to be deposited of the substrate. A chemical vapor deposition apparatus includes a heating block arranged in a closed space, a substrate holder for holding a substrate so that a surface to be deposited of the substrate is arranged to face to the heating block at a given distance, and a device for guiding a source gas to the closed space. In this CVD apparatus, the source gas guided by the device is guided to the closed space and supplied between the heating block and the substrate, thereby depositing a thin film on the surface to be deposited of the substrate.

REFERENCES:
patent: 4328261 (1982-05-01), Heinecke et al.
patent: 4438723 (1984-03-01), Cannella et al.
patent: 4447469 (1984-05-01), Peters
patent: 4503807 (1985-03-01), Nakayama et al.
patent: 4526806 (1985-07-01), Haque et al.
patent: 4599244 (1986-07-01), Falckenberg et al.
patent: 4599245 (1986-07-01), Falckenberg et al.
patent: 4625678 (1986-12-01), Shioya et al.
patent: 4649024 (1987-03-01), Brock et al.
patent: 4650698 (1987-03-01), Moriya et al.
patent: 4654228 (1987-03-01), Komiyama
patent: 4684542 (1987-08-01), Jasinski
Condensation and Evaporation (Nucleation and Growth Kinetics) pp. 15-28 by J. P. Hirth et al., Macmillan New York 1963.
"The Nucleation of CVD Silicon on SiO.sub.2 and Si.sub.3 N.sub.4 Substrates" by W. A. P. Claassen, J. Electrochem. Soc.: Solid-State Science and Technology, Jan. 1980.
"Characterization of LPCVD Aluminum for VLSI Processing", by R. A. Levy et al., J. Electrochem. Soc.: Solid-State Science and Technology, pp. 2175-2182, Sep. 1984.

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