Process of final passivation of an integrated circuit device

Details Process of final passivation of an integrated circuit device Process of final passivation of an integrated circuit device

2005-05-03

2005-05-03

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

With means to control surface effects

Insulating coating

C257S640000

Reexamination Certificate

active

06888225

ABSTRACT:
A process for forming a final passivation layer over an integrated circuit comprises a step of forming, over a surface of the integrated circuit, a protective film by means of High-Density Plasma Chemical Vapor Deposition.

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Pye, J.T. et al., “High-Density Plasma CVD and CMP for 0.25 μm Internetal Dielectric Processing,”Solid State Technology, 38(12):65-71, Dec. 1995.

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