Process of fabricating wiring structure having metal plug twice

Details Process of fabricating wiring structure having metal plug twice Process of fabricating wiring structure having metal plug twice

1997-05-30

1998-07-28

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

216 38, 216 88, 438756, H01L 2100

Patent

active

057862753

ABSTRACT:
A tungsten layer swells out from a contact hole into a tungsten layer on an inter-level insulating layer, and the tungsten layer is chemically mechanically polished so as to create s smooth top surface of the tungsten plug substantially coplanar with the upper surface of the inter-level insulating layer; the chemical mechanical polishing is changed from mild conditions to severe conditions at an intermediate point so that a shallow recess and scratches are not produced in the top surface of the inter-level insulating layer; the polishing speed, the particle size of powder in polishing slurry, the hydrogen ion concentration of the polishing slurry and additives are examples of the polishing condition to be controlled.

REFERENCES:
patent: 4992135 (1991-02-01), Doan
patent: 5244534 (1993-09-01), Yu et al.
patent: 5665202 (1997-09-01), Subramanian et al.

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