Process of fabricating semiconductor devices having lightly-dope

Details Process of fabricating semiconductor devices having lightly-dope Process of fabricating semiconductor devices having lightly-dope

1995-04-19

1996-03-26

Nguyen, Tuan H.

Fishing, trapping, and vermin destroying

437 44, 437 28, H01L 21265

Patent

active

055019978

ABSTRACT:
A process for fabricating semiconductor devices having lightly-doped regions in its drain and/or source. The semiconductor device has a gate structure formed on its substrate, and the sidewalls of the gate structure covered by sidewall spacers. The sidewall spacers having a selected thickness obstructs the impurity implantation and constitutes a lightly-doped region in addition to the relatively heavily-doped regions that are not obstructed during the implantation process. Both the lightly- and heavily-doped regions together constitute the drain and/or source of the semiconductor device.

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