Process of fabricating semiconductor device having isolating oxi

Details Process of fabricating semiconductor device having isolating oxi Process of fabricating semiconductor device having isolating oxi

1996-12-24

1997-10-14

Dang, Trung

Fishing, trapping, and vermin destroying

437 63, 437 64, 148DIG50, H01L 2176

Patent

active

056772335

ABSTRACT:
When an isolating oxide is formed in a silicon substrate, a side wall is formed on the inner wall of a mask consisting of a lower silicon oxide layer and an upper silicon nitride layer for forming a groove in the silicon substrate in such a manner as to be laterally spaced from the inner wall of the upper silicon nitride layer, and the isolating oxide is formed from a silicon oxide layer deposited over the mask after removal of the side wall by using a polishing, thereby preventing the isolating oxide from undesirable side etching during an etching step for the lower silicon oxide layer.

REFERENCES:
patent: 5177028 (1993-01-01), Manning
patent: 5506168 (1996-04-01), Morita et al.
patent: 5518950 (1996-05-01), Ibok et al.
T. Iizuka et al., "Double Threshold Mosfets in Bird's-Beak Free Structures", IEDM 81, 1981, pp. 380-383.

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