Process of fabricating semiconductor device having gettering sit

Details Process of fabricating semiconductor device having gettering sit Process of fabricating semiconductor device having gettering sit

1998-03-09

1999-12-14

Tsai, Jey

Semiconductor device manufacturing: process

Gettering of substrate

By implanting or irradiating

438407, 438455, 438459, 438517, 438526, H01L 21326

Patent

active

060017112

ABSTRACT:
Phosphorous ion is implanted into an SOI substrate under the conditions that the concentration is maximized in the upper silicon layer of the SOI substrate so as to forming a heavily-doped damaged layer, and the heavily-doped damaged layer is partially cured through a lamp annealing so as to concurrently form a heavily-doped buried layer and a gettering site layer.

REFERENCES:
"Anomalous Leakage Current Reduction By Ramping Rate Control in MEV Implantation", by Mat. Res. Soc. Symp. Proc. vol. 396, 1996 Materials Research Society.

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