Process of fabricating semiconductor device having gate structur

Details Process of fabricating semiconductor device having gate structur Process of fabricating semiconductor device having gate structur

1996-03-18

1998-06-23

Dutton, Brian

Radiation imagery chemistry: process, composition, or product th

Transfer procedure between image and image layer, image...

Diffusion transfer process, element, or identified image...

438592, H01L 218234, H01L 213205, H01L 214763

Patent

active

057704945

ABSTRACT:
Using a lamination of a tungsten silicide layer and a non-doped polysilicon layer as a mask, a dopant impurity is ion implanted into a semiconductor substrate so as to form impurity regions and dope the tungsten silicide layer with the dopant impurity, and the dopant impurity is diffused from the tungsten silicide layer into the non-doped polysilicon layer during the activation of the dopant impurity introduced into the substrate, thereby making the process simple.

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"21 PSEC Switching O lum-CMOS at Room Temperature Using High Performance Co Salicide Process" Yamazaki et al; 1993; IEDM; pp. 906-908.

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