Process of fabricating semiconductor device

Details Process of fabricating semiconductor device Process of fabricating semiconductor device

1997-06-17

1999-04-13

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Complementary bipolar transistors

438365, 438371, H01L 218228

Patent

active

058937439

ABSTRACT:
A process for forming a first bipolar transistor having a single polysilicon structure and a second bipolar transistor having a single polysilicon structure and being of a conducting type opposite to that of the first bipolar transistor on the same substrate. In the process of fabricating a semiconductor device in which a first bipolar transistor having a single polysilicon structure, a second bipolar transistor having a single polysilicon structure and being of a conducting type opposite to that of the first bipolar transistor, and a third bipolar transistor having a double polysilicon structure are provided on the same semiconductor substrate, a base contact portion of the first bipolar transistor and an emitter of the second bipolar transistor are formed in the same step, and an emitter of the first bipolar transistor and base contact portions of the second and third bipolar transistors are formed in the same step.

REFERENCES:
patent: 4898836 (1990-02-01), Zambrano et al.
patent: 5001073 (1991-03-01), Huie
patent: 5011784 (1991-04-01), Ratnahumar
patent: 5151378 (1992-09-01), Ramde

Affiliated with

Also associated with

Rating

Process of fabricating semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process of fabricating semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process of fabricating semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-222201