Process of fabricating semiconductor device

Details Process of fabricating semiconductor device Process of fabricating semiconductor device

1986-04-24

1987-12-08

Powell, William A.

Fishing, trapping, and vermin destroying

156646, 156653, 156657, 156662, 156643, 357 49, 437228, 29580, H01L 21306, B44C 122, C03C 1500, C03C 2506

Patent

active

047116994

ABSTRACT:
A process of fabricating a semiconductor device, comprising preparing a semiconductor substrate having a conductor layer formed on a surface thereof, the conductor layer having a step portion over the surface of the semiconductor substrate, forming a layer of polysilicon having a portion overlying the step portion of the conductor layer, and thermally oxidating the polysilicon layer for forming a polysilicon oxide layer having a portion substantially resulting from the portion of the polysilicon layer, the portion of the polysilicon oxide layer being thicker than another portion of the polysilicon oxide layer and becoming thinner away from the step portion of the conductor layer.

REFERENCES:
patent: 4219379 (1980-08-01), Athanas
patent: 4305200 (1981-12-01), Fu et al.

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