Process of fabricating photo-mask used for modified illumination

Details Process of fabricating photo-mask used for modified illumination Process of fabricating photo-mask used for modified illumination

1995-07-05

1997-05-20

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

430 22, 430394, G03F 900

Patent

active

056311109

ABSTRACT:
In order to produce a photo-mask for a modified illumination, corrective patterns are added to and/or deleted from each target area of a design pattern so as to minimize a deformation of an optical image on a photo-resist layer, and the corective patterns are calcualted by using algebraic equations without a trial-and-error.

REFERENCES:
patent: 4895780 (1990-01-01), Nissan-Cohen et al.
Alexander Starikov, "Use of a single size square . . . method, design, and practice.", SPIE vol. 1088 Optical/Laser Microlithography II, (Mar. 1989), pp. 34-47.
Oberdan W. Otto et al., "Automated optical proximity correction --a rules-based approach", SPIE vol. 2197 Optical/Laser Microlithography VII, (Mar. 1994), pp. 278-293.
John P. Stirniman et al., "Fast proximity correction with zone sampling", SPIE Optical/Laser Microlithography VII, (Mar. 1994), pp. 294-301.
Abstract of JP 040179952 (NEC).
Abstract of JP 630216052 (Fujitsu).
Abstract of JP 630165851 (Sony).

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