Process of fabricating junction isolated IGFET and bipolar trans

Details Process of fabricating junction isolated IGFET and bipolar trans Process of fabricating junction isolated IGFET and bipolar trans

1977-03-30

1978-10-17

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148 15, 148189, 357 43, 357 47, H01L 2702, H01L 21225, H01L 2120, H01L 2972

Patent

active

041207076

ABSTRACT:
A high voltage junction isolated integrated circuit having complementary insulated gate field effect and PNP transistors wherein low impurity gradient and concentration N-type source and drain regions of the N-channel device and base region of the PNP are formed in even lower impurity gradient and concentration P-type body regions and collector region respectively which are in an N-substrate.
The process includes diffusing P-type regions in said N-type substrate to form a low impurity gradient and concentration body and collector, diffusing N-type regions in said P-type regions to form a low impurity gradient and concentration source, drain and base, diffusing P-type regions in said N-type base region to form a high impurity gradient and concentration emitter and in said substrates to form a high impurity gradient and concentration source and drain, and diffusing N-type regions in said N-type base, source and drain regions to form high impurity gradient and concentration contacts.

REFERENCES:
patent: 3798079 (1974-03-01), Chu et al.
patent: 3865649 (1975-02-01), Beasom
patent: 4032956 (1977-06-01), Yagi et al.
H. Yagi et al., "A Novel Bipolar . . . Low Emitter Impurity Conc. . . .", Tech. Digest 1974, Int. Electr. Device Meet., Wash.
De Graaff et al., "Some Aspects of LEC Transistor . . .", Solid State Electr. 19, (1976) 809.

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