Process of fabricating field-emission type electron source, elec

Details Process of fabricating field-emission type electron source, elec Process of fabricating field-emission type electron source, elec

1996-02-09

1998-09-01

Ramsey, Kenneth J.

Electric lamp or space discharge component or device manufacturi

Process

With assembly or disassembly

445 58, H01J 940

Patent

active

058002332

ABSTRACT:
A cathode is formed on a glass substrate by depositing nickel thereon, and silicon dioxide is allowed to accumulate on the cathode by sputtering to form an insulator film. Then, a gate electrode is provided on the insulator film by depositing nickel thereon. A hole is formed on the glass substrate by lithography to carry out patterning, and the gate electrode and the insulator film are selectively etched to create a hole for the formation of an emitter emitting electrons. Furthermore, nickel is stacked into the hole by deposition to form the emitter, and subsequently the emitter is covered with sulfur as a high vapor-pressure substance to form a high vapor-pressure substance layer.

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Masao Urayama et al., "Silicon Field Emitter Capable of Low Voltage Emission", Jpn. J. Appl. Phys., vol. 32, Part 1, No. 12B (Dec. 1993), pp. 6293-6296.
J.P. Spallas et al. "Self-Aligned Silicon Field Emission Cathode Arrays Formed By Selective, Lateral Thermal Oxidation Of Silicon," Journal of Vacuum Science and Technology, Part B, vol. 11, No. 2, Mar. 1, 1993, pp. 437-440.

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