Process of fabricating a dielectric film for a semiconductor dev

Details Process of fabricating a dielectric film for a semiconductor dev Process of fabricating a dielectric film for a semiconductor dev

1992-10-07

1996-04-09

Fourson, George

Fishing, trapping, and vermin destroying

437229, H01L 21312, H01L 2147

Patent

active

055061737

ABSTRACT:
A method of processing an insulating film containing voids associated with the increased semiconductor device density is performed. An insulating film containing voids is coated with another insulating film by spin-on technique to substantially close up the voids, followed by photolithography process. By the processing without adverse affects from the presence of voids, for example, an undamaged cover film can formed, which can contribute to greater reliability of semiconductor devices.

REFERENCES:
patent: 4038110 (1977-07-01), Feng
patent: 4618878 (1986-11-01), Aoyama et al.
patent: 4996165 (1991-02-01), Chang et al.
patent: 5070037 (1991-12-01), Leisure et al.

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