Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Patent
1994-03-17
1998-03-03
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
313501, 313542, 2504931, 250423R, H01L 29201, H01L 29161
Patent
active
057238715
ABSTRACT:
A process of producing a highly spin-polarized electron beam, including the steps of applying a light energy to a semiconductor device comprising a first compound semiconductor layer having a first lattice constant and a second compound semiconductor layer having a second lattice constant different from the first lattice constant, the second semiconductor layer being in junction contact with the first semiconductor layer to provide a strained semiconductor heterostructure, a magnitude of mismatch between the first and second lattice constants defining an energy splitting between a heavy hole band and a light hole band in the second semiconductor layer, such that the energy splitting is greater than a thermal noise energy in the second semiconductor layer in use; and extracting the highly spin-polarized electron beam from the second semiconductor layer upon receiving the light energy. A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs.sub.1-x P.sub.x, and having a first lattice constant; and a second compound semiconductor layer provided on the first semiconductor layer, the second semiconductor layer having a second lattice constant different from the first lattice constant and a thickness, t, smaller than the thickness of the first semiconductor layer.
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F. Ciccaci et al., "Spin-Polarized Photoemission from AlGaAs/GaAs Heterojunction : A Convenient Highly Polarized Electron Source," Applied Physics Letters, vol. 54, No. 7, Feb. 1989, pp. 632-634.
T. Maruyama, et al., "Observation of Strain-Enhanced Electron Spin-Polarization in Photemission from InGaAs," Physical Review Letters, vol. 66, No. 18, pp. 2376-2379.
W. Hartmann, et al., "A Source of Polarized Electrons Based on Photemission of GaAsP, "Nuclear Instruments and Methods in Physical Research A286, No. 1/2, Jan. 1990, pp. 1-8.
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Horinaka Hiromichi
Kato Toshihiro
Nakanishi Tsutomu
Saka Takashi
Daido Tokushuko Kabushiki Kaisha
Guay John
Jackson Jerome
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