Process of emitting highly spin-polarized electron beam and semi

Details Process of emitting highly spin-polarized electron beam and semi Process of emitting highly spin-polarized electron beam and semi

1995-03-27

1996-06-04

Berman, Jack I.

Radiant energy

Ion generation

Field ionization type

250423R, 2504931, H01J 3900

Patent

active

055235727

ABSTRACT:
A process of producing a highly spin-polarized electron beam, including the steps of applying a light energy to a semiconductor device comprising a first compound semiconductor layer having a first lattice constant and a second compound semiconductor layer having a second lattice constant different from the first lattice constant, the second semiconductor layer being in junction contact with the first semiconductor layer to provide a strained semiconductor heterostructure, a magnitude of mismatch between the first and second lattice constants defining an energy splitting between a heavy hole band and a light hole band in the second semiconductor layer, such that the energy splitting is greater than a thermal noise energy in the second semiconductor layer in use; and extracting the highly spin-polarized electron beam from the second semiconductor layer upon receiving the light energy. A semiconductor device for emitting, upon receiving a light energy, a highly spin-polarized electron beam, including a first compound semiconductor layer formed of gallium arsenide phosphide, GaAs.sub.1-x P.sub.x, and having a first lattice constant; and a second compound semiconductor layer provided on the first semiconductor layer, the second semiconductor layer having a second lattice constant different from the first lattice constant and a thickness, t, smaller than the thickness of the first semiconductor layer.

REFERENCES:
patent: 3968376 (1976-07-01), Pierce et al.
patent: 4985627 (1991-01-01), Gutierrez et al.
patent: 5315127 (1994-05-01), Nakaniski et al.

Affiliated with

Also associated with

Rating

Process of emitting highly spin-polarized electron beam and semi does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process of emitting highly spin-polarized electron beam and semi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process of emitting highly spin-polarized electron beam and semi will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-385598