Process of deposition and solid state reaction for making alloye

Details Process of deposition and solid state reaction for making alloye Process of deposition and solid state reaction for making alloye

1993-11-08

1994-07-19

Roy, Upendra

Metal treatment

Process of modifying or maintaining internal physical...

Producing or treating layered, bonded, welded, or...

148537, 420469, C22C 900

Patent

active

053305922

ABSTRACT:
The present invention relates to novel compounds that exhibit unusually low electrical resistivity at room temperature. More specifically, it has been discovered that the incorporation of at least 1 to 15 atomic percent of gallium and/or at least 1 to 15 atomic percent gold into stoichiometric copper germanide (Cu.sub.3 Ge) compound results in a room temperature resistivity comparable to elemental copper, but with superior chemical and electronic stability upon exposure to air or oxygen at high temperatures. Furthermore, the compounds of the present invention have none of the problems associated with the diffusion of copper into elemental and compound semiconductors which oftentimes lead to the degradation of the semiconductor device characteristics. Additionally, the present invention relates to a method of preparing the novel compounds mentioned previously hereinabove.

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