Process of depositing a layer of silicon oxide bonded to a subst

Details Process of depositing a layer of silicon oxide bonded to a subst Process of depositing a layer of silicon oxide bonded to a subst

1994-05-24

1996-06-18

Ryan, Patrick J.

Stock material or miscellaneous articles

Composite

Of inorganic material

428702, 427536, 427534, 427488, 427562, 427563, 427583, 4272553, B32B 900

Patent

active

055276296

ABSTRACT:
The invention concerns a process for depositing a thin layer of silicon oxide bonded to a substrate of a polymeric material comprising, concomitantly or consecutively (1) subjecting a surface of the substrate to an electrical discharge with dielectric barrier and (2) exposing said surface of the substrate to an atmosphere containing a silane, thus forming a deposit of silicon oxide bonded to said surface of the substrate Application to the production of sheets or films useful for example as food wrapping.

REFERENCES:
patent: 4563316 (1986-01-01), Isaka et al.
patent: 4927704 (1990-05-01), Reed et al.
patent: 5026463 (1991-06-01), Dinter
patent: 5107791 (1992-04-01), Hirokawa
patent: 5185132 (1993-02-01), Horiike
Wolf, "Silicon Processing for the VLSI Era" vol. 1, Process Technology Aug. 6, 1990.

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