Process of cleaning a semiconductor manufacturing system and...

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S710000, C438S711000, C438S712000, C438S716000, C438S787000, C438S788000, C438S791000, C438S792000, C438S905000, C438S906000

Reexamination Certificate

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07816272

ABSTRACT:
A process of cleaning a semiconductor manufacturing system, and a method of manufacturing a semiconductor device. The cleaning process includes, for example, positioning a ceramic cover on the electrostatic chuck in tight contact with the chuck, and feeding a fluoride-based cleaning gas into a chamber. After the cleaning process, a process of forming a semiconductor film (deposition process) is performed. It is possible to prevent fluorine degasification from a substrate-supporting electrode (electrostatic chuck) during the deposition process. A semiconductor film can be formed without causing a temperature drop near the substrate. This prevents irregular film thickness, defective etching, film flaking, etc.

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patent: 10-147877 (1998-06-01), None

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