Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Patent
1998-08-18
2000-06-27
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
438692, 438693, H01L 21302
Patent
active
060806710
ABSTRACT:
A polishing process to planarize a layer formed on a substrate and to reduce the variations in the thickness of that layer from substrate to substrate. The polishing process is implemented by polishing a substrate using a stable pad material. A stable pad material is formed from a polishing material that has substantially the same or similar density, hardness, and compressibility as polyurethane but is a material other than or substantially other than polyurethane. In an alternative embodiment, the material for the polishing pad may be selected for its compression, high tensile strength, wear resistance and/or resistance to water, diluted acids, and alkalis. In a further alternative embodiment, the material forming the polishing pad may be selected from the group comprising hydrogenated nitrile compounds, fluoroelastomers, or perfluoroelastomers.
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Crevasse Annette Margaret
Crevasse Brian David
Easter William Graham
Maze, III John Albert
Anderson Matt
Grillo Anthony
Lucent Technologies - Inc.
Utech Benjamin L.
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