Process of bonding sputtering targets to target electrodes

Details Process of bonding sputtering targets to target electrodes Process of bonding sputtering targets to target electrodes

1980-02-26

1981-06-09

Gantz, Delbert E.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

204192R, C23C 1500

Patent

active

042723558

ABSTRACT:
In the process of sputter deposition of targets on target electrodes, a gallium-indium eutectic alloy is employed to form a floating bond between the target material and the target electrode. Relatively high radio frequency (r.f.) power density is used to increase the deposition rate without cracking the target.

REFERENCES:
patent: 3294661 (1966-12-01), Maissel
patent: 4204936 (1980-05-01), Hartsough
J. van Esdonk et al., "Joining a Sputtering Target and a Backing Plate", Research/Development, Jan. 1975, pp. 41-44.
J. L. Vossen et al., Thin Film Processes, Academic Press, New York, 1978, pp. 31-33.
G. R. Giedd et al., "Indium Bond For Silicon Chip Attachment", IBM Technical Disclosure Bulletin, vol. 11, No. 2, (Jul. 1968), p. 117.
W. A. Dawson et al., "Indium-Lead-Indium Chip Joining", IBM Technical Disclosure Bulletin, vol. 11, No. 11, (Apr. 1969), p. 1528.

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