Process of bonding copper and tungsten

Metal fusion bonding – Process – Critical work component – temperature – or pressure

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228194, 228198, 2281241, 428547, 428550, 428610, B05D 700

Patent

active

059884886

ABSTRACT:
Process for bonding a copper substrate to a tungsten substrate by providing a thin metallic adhesion promoting film bonded to a tungsten substrate and a functionally graded material (FGM) interlayer bonding the thin metallic adhesion promoting film to the copper substrate. The FGM interlayer is formed by thermal plasma spraying mixtures of copper powder and tungsten powder in a varied blending ratio such that the blending ratio of the copper powder and the tungsten powder that is fed to a plasma torch is intermittently adjusted to provide progressively higher copper content/tungsten content, by volume, ratio values in the interlayer in a lineal direction extending from the tungsten substrate towards the copper substrate. The resulting copper to tungsten joint well accommodates the difference in the coefficient of thermal expansion of the materials.

REFERENCES:
patent: 4886709 (1989-12-01), Sasame et al.
patent: 5126102 (1992-06-01), Takahashi et al.
patent: 5705283 (1998-01-01), Upadhya

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