Process monitoring methods in a plasma processing apparatus,...

Details Process monitoring methods in a plasma processing apparatus,... Process monitoring methods in a plasma processing apparatus,...

2005-11-22

2005-11-22

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Interconnecting plural devices on semiconductor substrate

C438S007000, C438S009000, C216S059000, C216S060000, C156S345240, C156S345250, C118S722000

Reexamination Certificate

active

06967109

ABSTRACT:
A method and apparatus for measuring a potential difference for plasma processing with a plasma processing apparatus that processes a sample by introducing a gas into a vacuum chamber and generates plasma. A light-emitting portion is formed on a measurement-use sample of the sample to be processed and a current flows into the light-emitting portion according to a potential difference that has been generated across the light-emitting portion. An intensity of light emitted from the light-emitting portion according to a predetermined light intensity is measured and a potential difference on the measurement-use sample according to a predetermined light intensity is measured.

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“A Plasmascope Using Light Emitting Diodes”, Rev. of Sci. Instru., vol. 45, No. 1, pp. 57-59, Ejima et al (Jan. 1974).

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