Process monitor and method thereof

Details Process monitor and method thereof Process monitor and method thereof

1984-03-09

1986-09-16

Willis, Davis L.

Optics: measuring and testing

By dispersed light spectroscopy

Utilizing a spectrometer

156626, G01B 902

Patent

active

046119191

ABSTRACT:
A process monitor which is particularly useful for endpoint detection in plasma etching processes does not require the dedication of a test area on the wafer for endpoint detection and also obviates the need for wafer alignment. An improved optical window which does not significantly perturb the RF fields in the plasma chamber is also disclosed. The apparatus reflects laser energy off an area of the wafer comparable to the area of a typical die and extracts the necessary information from the resulting waveform by means of first and second time derivatives.

REFERENCES:
patent: 4198261 (1980-04-01), Busta et al.
patent: 4208240 (1980-06-01), Latos
patent: 4454001 (1984-06-01), Sternheim et al.
patent: 4462860 (1984-07-01), Szmanda
Bennett et al., "Selective and Directional Etching of Polysilicon and WSi.sub.2 ", IBM Tech. Disclo. Bull., vol. 25, No. 1, pp. 33-34, 6/82.

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