Process methodology for two-sided fabrication of devices on thin

Details Process methodology for two-sided fabrication of devices on thin Process methodology for two-sided fabrication of devices on thin

1987-08-27

1988-11-01

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437203, 437226, H01L 21306

Patent

active

047820284

ABSTRACT:
A method is disclosed for forming a detector device, such as a thinned bulk silicon blocked impurity transducer infrared detector, by thinning a semiconductor substrate (10) and processing the thinned region (30) on two sides to form the detector device. The semiconductor substrate (10) is thinned to form a cavity (26) in the substrate (10). Further processing on both sides of the thinned region (30) is performed while the thinned region is still connected to the thicker substrate. The thinned region (30) is then separated from the substrate (10) upon completion of the given processing steps. The device is then mounted to a readout device (58).

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