Process induced charging damage control device

Details Process induced charging damage control device Process induced charging damage control device

1997-11-13

1999-10-05

Sherry, Michael J.

Electricity: electrical systems and devices

Safety and protection of systems and devices

Transient responsive

361 56, 257356, H02H 322

Patent

active

059634120

ABSTRACT:
A plasma charging damage protection structure (40, 104) includes a first conduction path (90) for conducting positive plasma charging away from a device needing protection (44) and a second conduction path (94) for conducting negative plasma charging away from the device needing protection (44). In addition, a method (200) of preventing plasma induced charging damage includes the forming of plasma charging during semiconductor processing (202). The method also includes conducting the plasma charging through a first conduction path if the plasma charging is positive (210) and conducting the plasma charging through a second conduction path if the plasma charging is negative (214).

REFERENCES:
patent: 5650651 (1997-07-01), Bui
International Electron Devices Meeting, Sponsored by Electron Devices Society of IEEE, Washington, DC, Dec. 508, 1993, pp. 18.3.0-18.3.4.
Japanese Journal of Applied Physics, Oct., 1994, vol. 33 No. 10.
1996 1.sup.st International Symposium on Plasma Process-Induced Damage, Kin P. Cheung, Moritaka Nakamura and Calvin T. Gabriel, Editors, Santa Clara, California May 13-14, 1996.

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