Process gas introduction, confinement and evacuation system for

Details Process gas introduction, confinement and evacuation system for Process gas introduction, confinement and evacuation system for

1982-10-27

1984-07-31

Smith, John D.

Coating apparatus

Gas or vapor deposition

With treating means

118718, 427 39, C23C 1310

Patent

active

044623330

ABSTRACT:
A system for introducing, confining and evacuating process gases adjacent the cathode region of glow discharge deposition apparatus, said apparatus adapted to deposit at least one layer of semiconductor material onto a substrate. The deposition apparatus includes at least one dedicated deposition chamber into which process gases are introduced for glow discharge disassociation into species. The system of the present invention includes a baffling manifold adjacent the cathode, said manifold adapted to substantially reduce areas of localized rarification and compression of process gases flowing through the plasma region for substantially preventing adjacent stagnant and rapidly moving areas of process gases from forming nonuniform flow patterns as the semiconductor layer is deposited on the surface of the substrate. The system is also adapted to expose the entire transverse width of the substrate for the deposition of semiconductor material thereunto.

REFERENCES:
patent: 4269137 (1981-05-01), Johnson
patent: 4369730 (1983-01-01), Izu et al.
Viva, "Obtaining Improved Gas Flow In Diffusion Apparatus", IBM Tech. Disclosure Bulletin, vol. 14, No. 9, Feb. 1972, p. 2550.

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