Process gas introduction and channeling system to produce a prof

Details Process gas introduction and channeling system to produce a prof Process gas introduction and channeling system to produce a prof

1983-03-14

1984-10-30

Smith, John D.

Coating apparatus

Gas or vapor deposition

Running length work

118719, 118723, 118724, 4272555, 427 39, 427 85, C23C 1310

Patent

active

044794550

ABSTRACT:
A process gas introduction and channeling system for use with apparatus adapted to produce photovoltaic devices by depositing semiconductor layers onto continuously moving substrate material. The deposition apparatus preferably includes at least one deposition chamber having (1) a region in which process gases are decomposed and (2) a manifold from which process gases are introduced to flow through the downstream decomposition region. In the preferred embodiment, as the process gases flow through the decomposition region, they are disassociated and recombined under the influence of an electromagnetic field. The species and combinations of process gases thus formed are deposited onto the substrate material. The process gas introduction and channeling system described herein, is adapted to direct the process gases introduced into each of the at least one deposition chamber to pass through the decomposition region thereof in a direction substantially parallel to the direction of travel of the substrate material, whereby substantially uniform semiconductor layers are deposited atop the entire surface of the substrate material.

REFERENCES:
patent: 3441454 (1969-04-01), Shaikh
patent: 3660179 (1972-05-01), Desmond et al.
patent: 3893876 (1975-07-01), Akai et al.
patent: 4400409 (1983-08-01), Izu et al.

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