Process for X-ray mask warpage reduction

Details Process for X-ray mask warpage reduction Process for X-ray mask warpage reduction

1991-04-04

1992-06-23

Berman, Jack I.

Radiant energy

Radiation controlling means

378 34, 378 35, 430 5, G03F 100

Patent

active

051245612

ABSTRACT:
An X-ray mask substrate includes a silicon wafer having a square, central region etched to a thin, tensile membrane and a highly tensile film deposited on the bottom surface of the substrate to reduce substrate warpage. The square, central region of the substrate is adapted to support X-ray absorbing material during the lithography process. A layer of highly tensile film such as tungsten is deposited on the lower side of the substrate to induce a bending moment on the substrate opposite that induced during the substrate fabrication process. The thickness of the film layer is directly proportional to the amount of warpage induced in the substrate during the fabrication process. A support ring is bonded to the peripheral region of the substrate to provide integrity and support.

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patent: 4522842 (1985-06-01), Levinstein
patent: 4881257 (1989-11-01), Nakagawa

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