Process for washing and drying a semiconductor element

Cleaning and liquid contact with solids – Processes – Longitudinally traveling work of bar – strip – strand – sheet...

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134 30, 134 33, 134 34, 134199, B08B 302

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045198462

ABSTRACT:
After subjecting a semiconductor element to etching, it must be washed with water and then dried so as to remove any etchant therefrom. In the course of the washing and drying steps, the semiconductor element may undergo quality changes due to its contact with water. Such quality changes become remarkable when the semiconductor element is kept for a long time period in the resultant washings. The above quality changes can be successfully avoided by holding an etched semiconductor element horizontally over a water-washing tank, pre-washing its downwardly-directed front surface with an upward jet of water, thoroughly washing the front surface with pure water blown upwardly from a lower part of the tank while washing its upwardly-directed rear surface with water so that both surfaces of the semiconductor element are washed completely, and then immediately spin-drying the thus-washed semiconductor element.

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patent: 4479849 (1984-10-01), Frantzen
Western Electric, Tech. Dig. No. 29, Lecatsas et al., "Laminar Flow Cleaning", Jan. 1973, pp. 39-40.

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