Process for use of photosensitive polysilanes as photoresist

Details Process for use of photosensitive polysilanes as photoresist Process for use of photosensitive polysilanes as photoresist

1993-06-17

1999-02-02

Rodee, Christopher D.

Radiation imagery chemistry: process, composition, or product th

Color imaging process

Using identified radiation sensitive composition in the...

4302701, G03F 7039

Patent

active

058663061

ABSTRACT:
The present invention relates to the use of certain polyalkylphenyl silanes in photoresists to generate positive tone resist images. The polyalkylphenyl silanes have the formula: ##STR1## where R is C2-C12 alkyl and n is about 150 to 7000.

REFERENCES:
patent: 3163534 (1964-12-01), Adams et al.
patent: 4587205 (1986-05-01), Harrah et al.
patent: 4822716 (1989-04-01), Onishi et al.
patent: 4871646 (1989-10-01), Hayase et al.
patent: 5204226 (1993-04-01), Baier et al.
Miller, et al., "Polysilanes: Solution Photochemistry and Deep-UV Lithography", ACS Sympos. Series No. 412 1989, 115.
Miller, et al., "Soluble Polysilanes: An Interesting New Class of Radiation Sensitive Materials", Polymer Eng. and Sci., 1986, vol. 26, No. 16.
Miller, et al., "Polysilane High Polymers", American Chemical Society, 1989.
Diaz, et al., "Electrooxidation of Substituted Silane High Polymers", (Res. Lab. IBM San Jose, CA) Chem. Abs. 103:88297f, 1985.
Taylor, et al., "Lithographic Photochemical and Oxygen RIE Properties of Three Polysilane Copolymers", Chem. Abs. 110:182759Z, 1989.
Hayase, et al., "Polysilane Compound, and Bilayer Photoresist Containing It", Chem. Abs. 111:31346G.
Miller, Chem. Abs. 112:12888/M, 1990.
Ito, et al., "Photosensitive Resin Compositions for Fine Patterning", Chem. Abs. 113:32000t, 1990.
Rosilio et al., "Contribution to the Study of Polysilanes for Photolithography", Microelectonic Engineering 6 (1987) 399-406.
Hitachi et al., "Radiosensitive and Photosensitive Organic Polymeric Material", vol. 7, No. 274 (P-241) (1419), Dec. 7, 1983.

Affiliated with

Also associated with

Rating

Process for use of photosensitive polysilanes as photoresist does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for use of photosensitive polysilanes as photoresist, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for use of photosensitive polysilanes as photoresist will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1115840