1972-12-19
1976-02-10
Tupman, W.
29578, 29584, 29590, B01j 1700
Patent
active
039381781
ABSTRACT:
In the embodiment is specifically described a method for irradiating a transistor device with radiant rays. The top surface of the semiconductor crystal contained in the transistor device is exposed to the radiant rays so that the radiated energy impinging upon a preselected part of the base region, underneath the emitter electrode, is less than that impinging upon the other parts of the base region. Masking and radiant ray absorptive material are used to facilitate the process. Thereafter, the device and/or crystal is subjected to heat treatment to selectively improve such characteristics of the transistor as amplifying and switching characteristics to produce transistors suitable to a necessity of different applications.
REFERENCES:
patent: 3540925 (1970-11-01), Athanas
patent: 3590471 (1971-07-01), Lepselter
patent: 3595716 (1971-07-01), Kerr
patent: 3622382 (1971-11-01), Karl
patent: 3691376 (1972-09-01), Bauerlein
Kawamata Toshio
Miura Shunji
Origin Electric Co., Ltd.
Stults Harold L.
Tupman W.
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